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TBS6416B4E - 1M x 16Bit x 4 Banks synchronous DRAM

TBS6416B4E_4145867.PDF Datasheet


Part No.	TBS6416B4E TBS6416B4E-7G
Description	1M x 16Bit x 4 Banks synchronous DRAM
File Size	205.44K / 8 Page
Maker	List of Unclassifed Manufacturers ETC
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Full text search : 1M x 16Bit x 4 Banks synchronous DRAM

Related Part Number

PART	Description	Maker
K4S641632C-TC_L10 K4S641632C-TC_L1H K4S641632C-TC_	1M x 16Bit x 4 Banks Synchronous DRAM	Samsung semiconductor
KM416S8030 KM416S8030T-G_F10 KM416S8030T-G_F8 KM41	2M x 16Bit x 4 Banks Synchronous DRAM	SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
K4S641632C-TC/L10 K4S641632C-TC/L1H K4S641632C-TC/	1M x 16Bit x 4 Banks Synchronous DRAM	SAMSUNG SEMICONDUCTOR CO. LTD.
HY57V561620CLT-6 HY57V561620CLT-8 HY57V561620CLT-K	4 BANKS X 4M X 16BIT SYNCHRONOUS DRAM	Hynix Semiconductor
K4M641633K	1M x 16Bit x 4 Banks Mobile SDRAM	Samsung semiconductor
K4S511633F-YPC K4S511633F K4S511633F-F1H K4S511633	8M x 16Bit x 4 Banks Mobile SDRAM 8米16 × 4银行移动SDRAM	Samsung Semiconductor Co., Ltd. SAMSUNG SEMICONDUCTOR CO. LTD. SAMSUNG[Samsung semiconductor] Samsung Electronic
K4S28163LD-RFR	2M x 16Bit x 4 Banks SDRAM in 54CSP Data Sheet	Samsung Electronic
IC42S16400 IC42S16400-7TI IC42S16400-7TIG IC42S164	DYNAMIC RAM 1M x 16Bit x 4 Banks (64-MBIT) SDRAM	ICSI[Integrated Circuit Solution Inc]
IC42S16160 IC42S16160-7TIG IC42S16160-6TG IC42S161	4M x 16Bit x 4 Banks (256-MBIT) SDRAM DYNAMIC RAM	ICSI[Integrated Circuit Solution Inc]
IC42S16160	4M x 16Bit x 4 Banks (256-MBIT) SDRAM 4米16 × 4银行56兆）内存	Integrated Silicon Solution, Inc.

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